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| Model name F3-10666CL9S-8GBSQ Series SQ Capacity 8 GB Module amount 1 piece placement two-sided memory chips amount 16 (16per module) data density 4096 each memory chip organisation 512Mx8 Design SO-DIMM Type DDR3 Connection 204-Pin Voltage by 1.425 Voltage until 1.575 Voltage Standard DDR3-1333 (PC3-10666) Timings CAS latency (CL) 9 RAS-to-CAS delay (tRCD) 9 RAS-Precharge time (tRP) 9 Row-Active time (tRAS) 24 | ||||||||
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